Study of the dv/dt characteristics of the silicon carbide schottky diodes

Author(s):  S. B. Rybalka, candidate of Sciences, associate Professor, Bryansk State Technical University, Bryansk , Russia, sbrybalka@yandex.ru

A. A. Demidov, Dr., associate Professor, Bryansk State Technical University, Bryansk , Russia, demandr@yandex.ru

E. A. Kulchenkov, no, no, Bryansk State Technical University, Bryansk , Russia, ewgeniy2000@mail.ru

A. Yu.Drakin , candidate of Sciences, associate Professor, Bryansk State Technical University, Bryansk , Russia, ada108@yandex.ru

Issue:  Volume 50, № 4

Rubric:  Physics. Mathematical modeling

Annotation:  For the first time, the dV/dt values for domestic and foreign SiC commercial diodes have been obtained experimentally. The domestic experimental measuring tester for determination of dV/dt characteristic of diodes at amplitude of impulse of reverse voltage VA applied across the Schottky diode (300 950 V) was constructed for the first time. It is determined experimentally that at the impulse of reverse voltage applied across the diode 900 V the values of dV/dt for domestic SiC commercial diodes are 148308 V/ns that are comparable with foreign diodes. The determined dV/dt value for domestic SiC commercial Schottky diode is more then typical dV/dt values for such foreign devices type and can stably work without failures in electric power circuit.

Keywords:  SiC, silicon carbide, Schottky diode, dV/dt value.

Full text (PDF):  Download

Downloads count:  207