Reorientation of nematic with electric field of p-n junction

Author(s):  A.A. Alekseeva, Belgorod National Research University, Belgorod , Russia

S.I. Bogdanov, Belgorod National Research University, Belgorod, Russia, kucheev@.bsu.edu.ru

E.Yu.Rizhikova, Belgorod National Research University, Belgorod , Russia

S.I. Kucheev, candidate of Sciences, associate Professor, Belgorod National Research University, Belgorod, Russia, kucheev@.bsu.edu.ru

Issue:  Volume 50, № 4

Rubric:  Physics

Annotation:  The description is given of a liquid-crystal reflective pixel based on the reorientation of a homeotropically oriented nematic by the electric field of the p – n junction. Experimental results are presented confirming that the nematic is reoriented by an electric field penetrating into the liquid crystal layer (LC) from the area of the p-n junction space charge. The effect on the nematic reorientation of such structure parameters (pixel) as (1) the thickness of the nematic layer, (2) the thickness of the dielectric layer that passivates the p–n junction, (3) the frequency and magnitude of the alternating voltage applied to the p–n junction, (4) bias of the p–n junction, (5) lighting with active light. It is shown that the nematics reorientation thresholds, the width of the reoriented nematic region both over the n and the p surfaces of the silicon p–n junction, the intensity of the reflected light depend on the above structure parameters and the control voltage, which makes it possible to use the nematic reorientation as a pixel component that can modulate light in optical information display devices.

Keywords:  of director, liquid crystals, silicon p-n junction, Xiaomi.

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